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Zolix 중수소 광원 Deuterium Light Source
Deuterium discharge lamp light source for UV spectroscopy
UV 분광용 중수소 방전 램프 광원
Description
DSi Silicon Photodetector Both are enclosed in a housing with BNC signal connector, and include mounting flanges for the direct mounting on the slit assembly of Omni- series monochromators. I-V amplifier ZAMP is recommended for the signal conversion Silicon photodetector application advices: DSi200/DSi300 are both current output modes, before connecting to the signal processors such as oscilloscope or lock-in amplifier, the IV Trans-impedance Amplifier ZAMP is proposed to be connected as a preamp and which can convert the current signal to voltage signal. If the signal processor indicates that it can be input current signal, you can connect the detectors to the signal processors directly. In order to improve the detection sensitivity, the IV Trans-impedance Amplifier is recommended. DSi200/DSi300 used with the DCS103 data acquisition system, the IV Trans-impedance Amplifier is recommended in order to improve the detection sensitivity. DSi200/DSi300 used with the DCS300PA data acquisition system, as signal amplifier has been integrated in the DCS300PA dual channel, it does not need to match pre-amplifier.
DSi 실리콘 광검출기. BNC 신호 커넥터가 있는 하우징에 내장되며, Omni- 시리즈 단색화 장치의 슬릿 어셈블리에 직접 장착할 수 있는 마운팅 플랜지 포함. I-V 증폭기 내장.
Specifications
Silicon photodiode detectors are a rugged standard detector for applications that have good collected light levels.
· DSi200 is UV enhanced for operation from 200-1100 nm, built-in UV sensitive Si photodetector
· DSi300 is general purpose detector for 300-1100 nm
· DSi200 is UV enhanced for operation from 200-1100 nm, built-in UV sensitive Si photodetector
· DSi300 is general purpose detector for 300-1100 nm
| Mode | DSi200 | DSi 300 |
| UV enhanced | Blue enhanced | |
| Effective Area(mm2) | 100 ( ø11.28) | 100 ( ø11.28) |
| Spectral Range(nm) | 200-1100 | 350-1100 |
| Peak Wavelength(nm) | 820 | 970 |
| Peak Responsivity(A/W) | 0.52 | 0.60(>0.55) |
| Response(A/W) | 0.14(>0.09)@254 nm | 0.20(>0.15)@410 nm |
| Rise Time(s) | 5.9 | 2 |
| Operating Temperature(°C) | -10~+60 | -10~+60 |
| Storage Temperature(°C) | -20~+70 | -20~+70 |
| Shunt Resistor(MΩ) | 10 (>5) | (>10) |
| Noise Equivalent Power NEP(W / √Hz) | 4.5×10-13 | 2.0×10-13 |
| Max.Operating Current(mA@0V Bias) | 0.1 | 10.0 |
| Junction Capacitance (pf@0V Bias) | 4500 | 8800 |
| Signal Output | current | current |
| Output Signal Polarity | P | P |
